EPITAXIAL-GROWTH OF SB GE/SI(111) STUDIED BY PHOTOELECTRON DIFFRACTION/

Authors
WESTPHAL C SOKELAND F DREINER S ZACHARIAS H
Citation
C. Westphal et al., EPITAXIAL-GROWTH OF SB GE/SI(111) STUDIED BY PHOTOELECTRON DIFFRACTION/, Surface review and letters, 5(1), 1998, pp. 151-155
Citations number
20
Categorie Soggetti
Physics, Condensed Matter","Physics, Atomic, Molecular & Chemical","Material Science
Journal title
Surface review and letters → ACNP
ISSN journal
0218625X
Volume
5
Issue
1
Year of publication
1998
Pages
151 - 155
Database
ISI
SICI code
0218-625X(1998)5:1<151:EOSGSB>2.0.ZU;2-F
Abstract
X-ray photoelectron diffraction is used to investigate the epitaxial g rowth of thin high quality Ge films on Si(111). Several Ge films have been prepared with varying coverages with and without Sb terminating t he interface towards the vacuum. The measured photoelectron pattern fo r monolayer Ge films exhibits only intralayer diffraction maxima due t o the double layers formed by the Ge diamond structure. For thicker fi lms interlayer scattering between two adjacent layers can be observed as well.