ATOMIC-STRUCTURE OF THE GAAS(001)-BETA-2(2X4) SURFACE

Authors
SRIVASTAVA GP JENKINS SJ
Citation
Gp. Srivastava et Sj. Jenkins, ATOMIC-STRUCTURE OF THE GAAS(001)-BETA-2(2X4) SURFACE, Surface review and letters, 5(1), 1998, pp. 219-222
Citations number
10
Categorie Soggetti
Physics, Condensed Matter","Physics, Atomic, Molecular & Chemical","Material Science
Journal title
Surface review and letters → ACNP
ISSN journal
0218625X
Volume
5
Issue
1
Year of publication
1998
Pages
219 - 222
Database
ISI
SICI code
0218-625X(1998)5:1<219:AOTGS>2.0.ZU;2-D
Abstract
We present detailed results of ab initio pseudopotential calculations for equilibrium atomic geometry and chemical bonding on the arsenic-te rminated GaAs(001)-beta 2(2 x 4) surface. We find that this surface is characterized by the presence of two distinct Ga-As bond lengths betw een the first and second surface layers. This feature is due to the pr esence of both threefold-and fourfold-coordinated Ga atoms in the seco nd layer.