ADSORPTION OF AL ON GAN(110) SURFACE

The electronic properties of Al deposited on GaN(110) surface with dif ferent adsorption geometries have been studied by using the surface li near muffin tin orbital approach. The layer projected density of state s for Al-covered GaN(110) surface is calculated and compared with that of the clean surface. The charge distribution before and after the ad sorption of Al are investigated. It is found that the deposited Al ato ms prefer to bond with the surface N atoms with some charge transferre d from Al to the GaN substrate. Finally, the Al-Ga exchange mechanism is also studied and it is found that the adsorbed Al may replace the s econd layer Ga atom to form a more stable configuration.