PHOTOEMISSION-STUDY OF QUANTUM-WELL STATES IN THIN ERAS FILMS ON GAAS(100)

Authors
WIGREN C ILVER L KANSKI J NILSSON PO KARLSSON UO
Citation
C. Wigren et al., PHOTOEMISSION-STUDY OF QUANTUM-WELL STATES IN THIN ERAS FILMS ON GAAS(100), Surface review and letters, 5(1), 1998, pp. 299-303
Citations number
13
Categorie Soggetti
Physics, Condensed Matter","Physics, Atomic, Molecular & Chemical","Material Science
Journal title
Surface review and letters → ACNP
ISSN journal
0218625X
Volume
5
Issue
1
Year of publication
1998
Pages
299 - 303
Database
ISI
SICI code
0218-625X(1998)5:1<299:POQSIT>2.0.ZU;2-G
Abstract
Quantum well states in very thin epitaxial ErAs layers on GaAs(100) ha ve been found in angle-resolved photoelectron spectra. From the disper sive properties of the quantum well states effective masses are obtain ed representing electron motion parallel to the surface layers and ort hogonal to the layers.