MODELING OF SEMICONDUCTOR-LASER AMPLIFIER FOR THE TERAHERTZ OPTICAL ASYMMETRIC DEMULTIPLEXER

A semiconductor laser amplifier (SLA) may be used as a nonlinear eleme nt in ultrafast optical asymmetric demultiplexers. For demultiplexing to take place in the optical domain it is necessary to create a switch ing window by placing the SLA asymmetrically in an optical loop and sa turating it with a short duration control pulse. The exact size of thi s window. for selecting the required pulse at the output port, depends mainly on the precise location of the SLA within the loop. Tn the pap er a finite length model of an SLA, used as a switching gate within th e loop, is presented and results for the carrier density, gain and pha se time responses together with transmission (switching) windows are a lso given. The result obtained for the latter is compared with practic al data.