Hydrogen silsesquioxane (HSQ) resin has demonstrated unique performanc
e as a precursor for the formation of interlayer dielectrics (ILDs) us
ed in manufacturing ICs with multilevel metallization schemes. Commerc
ially available HSQ-based films routinely provide dielectric constants
lower than PECVD silicon dioxide films in submicron devices, with hig
h degrees of planarization. Understanding HSQ film properties is key t
o successful integration of this material into current and future wafe
r processing lines.