UNDERSTANDING HYDROGEN SILSESQUIOXANE-BASED DIELECTRIC FILM PROCESSING

Authors
LOBODA MJ TOSKEY GA
Citation
Mj. Loboda et Ga. Toskey, UNDERSTANDING HYDROGEN SILSESQUIOXANE-BASED DIELECTRIC FILM PROCESSING, Solid state technology, 41(5), 1998, pp. 99
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid state technology → ACNP
ISSN journal
0038111X
Volume
41
Issue
5
Year of publication
1998
Database
ISI
SICI code
0038-111X(1998)41:5<99:UHSDFP>2.0.ZU;2-6
Abstract
Hydrogen silsesquioxane (HSQ) resin has demonstrated unique performanc e as a precursor for the formation of interlayer dielectrics (ILDs) us ed in manufacturing ICs with multilevel metallization schemes. Commerc ially available HSQ-based films routinely provide dielectric constants lower than PECVD silicon dioxide films in submicron devices, with hig h degrees of planarization. Understanding HSQ film properties is key t o successful integration of this material into current and future wafe r processing lines.