SIMMWIC RECTENNAS ON HIGH-RESISTIVITY SILICON AND CMOS COMPATIBILITY

Rectifying antennas (rectennas) are realized on high-resistivity silic on substrates using silicon monolithic millimeterwave integrated circu it (SIMMWIC) technology. Monolithically integrated coplanar Schottky b arrier diodes are used as rectifying elements embedded in different an tenna structures. Both p- and n-type Schottky barrier diodes are reali zed with cutoff frequencies up to 1 THz, The rectennas are combined wi th a CMOS preamplifier mounted as a multichip module (MCM) next to the rectenna on a high-resistivity silicon substrate, An amplification of 32 dB is measured. Maximum sensitivity of the detector circuit includ ing preamplification is 1600 mV/mW . cm(-2) at 94.6 GHz. For a monolit hic integration of high-frequency circuits with low-frequency control and signal-processing electronics, the monolithic integration of CMOS circuitry on high-resistivity silicon is discussed.