COPLANAR PASSIVE ELEMENTS ON SI SUBSTRATE FOR FREQUENCIES UP TO 110 GHZ

Authors
HEINRICH W GERDES J SCHMUCKLE FJ RHEINFELDER C STROHM K
Citation
W. Heinrich et al., COPLANAR PASSIVE ELEMENTS ON SI SUBSTRATE FOR FREQUENCIES UP TO 110 GHZ, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 709-712
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE transactions on microwave theory and techniques → ACNP
ISSN journal
00189480
Volume
46
Issue
5
Year of publication
1998
Part
2
Pages
709 - 712
Database
ISI
SICI code
0018-9480(1998)46:5<709:CPEOSS>2.0.ZU;2-7
Abstract
This paper provides both modeling and design information on coplanar p assive elements on silicon substrate, The influence of substrate resis tivity on coplanar waveguide (CPW) loss is discussed, and elements of a cell library for coplanar monolithic microwave integrated circuits ( MMIC's) on high-resistivity substrate are presented. The elements incl ude discontinuities, junctions, and spiral inductors, The models are b ased on field-theoretical simulations and verified by S-parameter meas urements up to 110 GHz.