NEW POLYIMIDE FILM FOR VLSI AND ITS ELECTRICAL CHARACTERIZATION

Multilevel structures consisting of alternating metal and dielectric l ayers are necessary to achieve interconnection in high density or VLSI (very large scale integration) circuits using either nos or bipolar t echnology. Polyimide is one of the excellent high temperature heat-res istant polymers in organic materials and has good planarization capabi lity and electrical insulating properties. In this work, following the synthesis of DAPDS (4,4'-bis (3-aminophenoxy)diphenylsulfone), by nuc leophilic aromatic substitution of 4,4'-dichlorodiphenyl sulfone with m-aminophenol, DAPDS/pyromellitic dianhydride based soluble and proces sable fully imidized polyimide was synthesized successfully by using s olution imidization technique. Using this specific polyimide, a metal- polyimide-silicon MIS (metal polyimide silicon) structure was manufact ured. Electrical properties of the MIS capacitance have been examined. The planarizing and patterning characteristics and electrical charact eristics such as current vs. voltage, breakdown field strength, permit tivity and capacitance vs. voltage for quasi-static and high frequency measurements are discussed. The results are compared with conventiona l dielectric films used in integrated circuit fabrication.