MONOMODE EMISSION AT 350 MW AND HIGH-RELIABILITY WITH INGAAS ALGAAS (LAMBDA=1020 NM) RIDGE-WAVE-GUIDE LASER-DIODES/

Citation
G. Beister et al., MONOMODE EMISSION AT 350 MW AND HIGH-RELIABILITY WITH INGAAS ALGAAS (LAMBDA=1020 NM) RIDGE-WAVE-GUIDE LASER-DIODES/, Electronics Letters, 34(8), 1998, pp. 778-779
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
34
Issue
8
Year of publication
1998
Pages
778 - 779
Database
ISI
SICI code
0013-5194(1998)34:8<778:MEA3MA>2.0.ZU;2-E
Abstract
3.35mm long InGAs/GaAs/AlGaAs ridge waveguide lasers emitting at 1020n m showed monomode emission up to 350mW. By widening the emission near field and protecting the Facets with ZnSe/Al2O3, remarkable facet stab ility was obtained, confirmed during aging at 40 degrees C and 300mW e mission power, or at 70 degrees C and 250mW.