EXTREMELY LOW-NOISE INGAP GAAS HBT OSCILLATOR AT C-BAND/

Authors
PEREZ S FLORIOT D MAURIN P BOUQUET P GUTIERREZ PM OBREGON J DELAGE SL
Citation
S. Perez et al., EXTREMELY LOW-NOISE INGAP GAAS HBT OSCILLATOR AT C-BAND/, Electronics Letters, 34(8), 1998, pp. 813-814
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
8
Year of publication
1998
Pages
813 - 814
Database
ISI
SICI code
0013-5194(1998)34:8<813:ELIGHO>2.0.ZU;2-D
Abstract
A state-of-the-art very low phase noise integrated hybrid dielectric r esonator oscillator (DRO) working at 6.7 GHz has been designed and fab ricated using a self-aligned InGaP/GaAs HBT as the active device. Very low PM noise has been experimentally obtained: -124 dBc/Hz at 10 kHz off-carrier. This result is compared with other silicon oscillator cir cuits fabricated with a similar topology. At least a 12 dB improvement for the HBT technology is observed.