D. Pahari et al., MIXED OXYDIETHANETHIOLATE DITHIOPHOSPHATE COMPLEXES OF INDIUM(III)/, Silicon, germanium, tin and lead compounds, 21(5), 1998, pp. 293-299
Treatment of indium(lll) chloride with the sodium salt of 2,2'-oxydiet
hanethiol (2-mercaptoethyl ether) and ammonium dialkyldithiophosphates
in a 1:1 molar ratio in benzene solution afforded [In{S2P(OR)(2)}{(SC
H2CH2)(2)O}](2) (1) [R = Et (1a), nPr (1b), iPr (1c)]. The crystal str
ucture of la shows a dimeric complex with two indium atoms being bridg
ed by two sulfur atoms. Each oxydiethanethiolate dianion is tetradenta
te, coordinating one indium centre via the ether oxygen atom and the t
wo thiolate sulfur atoms. One of the sulphur atoms also binds the seco
nd indium atom of the dimeric unit. The remaining sites in the indium
geometry are occupied by sulfur atoms derived from a chelating dithiop
hosphate ligand. The sulfur bridges in 1 can be cleaved by neutral don
or ligands such as pyridine and 2,2'-bipyridine to yield mononuclear c
omplexes.