LOCAL, NONVOLATILE ELECTRONIC WRITING OF EPITAXIAL PB(ZR0.52TI0.48)O-3 SRRUO3 HETEROSTRUCTURES/

A scanning probe microscope was used to induce local, nonvolatile fiel d effects in epitaxial, ferroelectric Pb(Zr0.52Ti0.48)O-3/SrRuO3 heter ostructures. Field-effected regions with linewidths as small as 3500 a ngstroms were written by locally switching the polarization field of t he Pb(Zr0.52Ti0.48)O-3 layer; the electronic density of the underlying metallic SrRuO3 layer was modified and the sheet resistance was chang ed by up to 300 ohms per square. This procedure is completely reversib le and allows submicrometer electronic features to be written directly in two dimensions, with no external electrical contacts or lithograph ic steps required.