ELECTRICAL, GALVANOMAGNETIC, AND THERMOELECTRIC PROPERTIES OF PBSE INTHE VOID SUBLATTICE OF OPAL

Authors
ARUTYUNYAN LI BOGOMOLOV VN KURDYUKOV DA POPOV VV PROKOFEV AV SMIRNOV IA
Citation
Li. Arutyunyan et al., ELECTRICAL, GALVANOMAGNETIC, AND THERMOELECTRIC PROPERTIES OF PBSE INTHE VOID SUBLATTICE OF OPAL, Physics of the solid state, 40(4), 1998, pp. 719-721
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physics of the solid state → ACNP
ISSN journal
10637834
Volume
40
Issue
4
Year of publication
1998
Pages
719 - 721
Database
ISI
SICI code
1063-7834(1998)40:4<719:EGATPO>2.0.ZU;2-P
Abstract
A study of transport phenomena, namely, electrical resistivity, thermo power, Hall coefficient, and magnetoresistance of p PbSe synthesized i n opal voids has been carried out in the 4-300 K range. The parameters of the semiconducting material have been determined at different void filling levels. An anomalous behavior of the hole mobility associated with surface scattering from insulating opal-matrix walls has been ob served. (C) 1998 American Institute of Physics.