Jak. Freire et al., ENERGY-LEVEL SPLITTING IN DOPED NONABRUPT GAAS ALXGA1-XAS DOUBLE-QUANTUM-WELL/, Solid state communications, 106(9), 1998, pp. 559-562
The electron energy levels of doped nonabrupt GaAs/AlxGa1-xAs double q
uantum wells are calculated. It is shown that their characteristic spl
itting is reduced considerably when interface widths of only two GaAs
lattice units are considered. The nonabrupt interfaces shift the energ
y levels toward high energies. The energy level shift and splitting ar
e sensitive to the level of doping. (C) 1998 Elsevier Science Ltd. All
rights reserved.