ENERGY-LEVEL SPLITTING IN DOPED NONABRUPT GAAS ALXGA1-XAS DOUBLE-QUANTUM-WELL/

Authors
FREIRE JAK FARIAS GA FREIRE VN
Citation
Jak. Freire et al., ENERGY-LEVEL SPLITTING IN DOPED NONABRUPT GAAS ALXGA1-XAS DOUBLE-QUANTUM-WELL/, Solid state communications, 106(9), 1998, pp. 559-562
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
106
Issue
9
Year of publication
1998
Pages
559 - 562
Database
ISI
SICI code
0038-1098(1998)106:9<559:ESIDNG>2.0.ZU;2-V
Abstract
The electron energy levels of doped nonabrupt GaAs/AlxGa1-xAs double q uantum wells are calculated. It is shown that their characteristic spl itting is reduced considerably when interface widths of only two GaAs lattice units are considered. The nonabrupt interfaces shift the energ y levels toward high energies. The energy level shift and splitting ar e sensitive to the level of doping. (C) 1998 Elsevier Science Ltd. All rights reserved.