BE DIFFUSION IN GAINAS HOMOJUNCTION STRUCTURE GROWN BY CBE

Authors
GAUTIER S KOUMETZ S MARCON J KETATA K KETATA M
Citation
S. Gautier et al., BE DIFFUSION IN GAINAS HOMOJUNCTION STRUCTURE GROWN BY CBE, Solid state communications, 106(9), 1998, pp. 573-576
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
106
Issue
9
Year of publication
1998
Pages
573 - 576
Database
ISI
SICI code
0038-1098(1998)106:9<573:BDIGHS>2.0.ZU;2-3
Abstract
The present work investigates the Be diffusion mechanisms during the p ost-growth annealing in GaInAs epitaxial layers grown by Chemical Beam Epitaxy (CBE) method. In parallel with our experimental study, to exp lain the observed depth profiles, obtained by Secondary Ion Mass Spect rometry (SIMS) analysis, we proposed the appropriate models of Be diff usion in the case of point defect nonequilibrium. (C) 1998 Elsevier Sc ience Ltd. All rights reserved.