A. simple and effective process of preparing ultra-thin zeolite films
on a silicon substrate is described. The starting material was a stabl
e colloidal dispersion of TS-I zeolite particles with a size of 50 -10
0 nm. The silicon wafer is placed in a 20 mM solution of hexanoic acid
in water at pH = 3. When the colloidal dispersion is added, the adsor
ption of the hexanoic acid molecules onto the zeolite particles causes
them to deposit on the silicon wafer to form a thin layer with a thic
kness of about 103 nm.