EPITAXIAL SILICON DETECTORS OF FISSION FRAGMENTS

Parameters of silicon detectors based on 20-50 mu m thick epitaxial st ructures with resistivities 30-80 Omega cm were investigated. The resp onse of the epitaxial Si detectors irradiated with spontaneous fission fragments of Cf-252 was studied. The relative charge losses and the e ffective lifetimes of charge carriers generated in the detectors by li ght and heavy fission fragments agree with the values known for the su rface-barrier detectors. Parameters of the energy distribution of fiss ion fragments and their dependences on the bias voltage show that the epitaxial Si detectors satisfy requirements of fission fragment spectr oscopy even in the region of low bias voltages.