MONITORING MOLECULAR FLUXES WITH THE USE OF REFLECTION MASS-SPECTROMETRY TO CONTROL THE COMPOSITION OF INXGA1-XAS FILMS

The use of reflection mass spectrometry to control the composition of InGaAs ternary compounds is described; the technique was applied to In GaAs films grown by molecular-beam epitaxy and is shown to be efficien t over a wide range of concentrations and growth rates. A special feat ure of the proposed technique is that the ratio of the In and Ga fluxe s is measured immediately prior to the growth onset in the regime of t otal reflection of fluxes.