ANALYSIS OF AN OXYGEN DISSOLUTION PROCESS CONCERNING CZOCHRALSKI (CZ)SI CRYSTAL-GROWTH USING THE SESSILE DROP METHOD

Authors
HUANG XM SAITOU K SAKAI S TERASHIMA K HOSHIKAWA K
Citation
Xm. Huang et al., ANALYSIS OF AN OXYGEN DISSOLUTION PROCESS CONCERNING CZOCHRALSKI (CZ)SI CRYSTAL-GROWTH USING THE SESSILE DROP METHOD, JPN J A P 2, 37(2B), 1998, pp. 193-195
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
37
Issue
2B
Year of publication
1998
Pages
193 - 195
Database
ISI
SICI code
Abstract
A new sessile drop method has been developed for measuring the oxygen dissolution rate from silica glass to silicon melt. Compared to the ox ygen dissolution rate obtained using a conventional measurement method , a much larger value has been obtained with the sessile drop method. The experimental accuracy of the sessile drop method was analyzed, and it was found that the main error resulted from the weight change of a blank silica plate following heat treatment. A rectification method w as suggested.