TRANSMISSION ELECTRON-MICROSCOPE OBSERVATION OF GROWN-IN DEFECTS DETECTED BY BRIGHT-FIELD INFRARED-LASER INTERFEROMETER IN CZOCHRALSKI SILICON-CRYSTALS

Grown-in defects detected by a bright-field infrared-laser interferome ter (known as Optical Precipitate Profiler: OPP) in Czochralski silico n (Cz-Si) have been investigated by means of transmission electron mic roscopy (TEM). The grown-in defects in Cz-Si grown at the pulling rate of 1.0 mm/min are identified as twin or triple polyhedral cavities fa ced by {111} and {100} planes, with a total size of 0.1-0.2 mu m. Thes e polyhedral cavities were observed to be attached to each other. It h as been found that the grown-in defects in growth-held Cz-Si at 1080 d egrees C for 120 min remarkably grow as twin or triple polyhedral cavi ties with a total size of 0.4-0.7 mu m. Further, the quantitative rela tion between the size of the grown-in defects and the OPP signal inten sity is derived.