LOW-TEMPERATURE SELECTIVE GROWTH OF ZNSE AND ZNS ON (001)GAAS PATTERNED WITH CARBONACEOUS MASK BY METALORGANIC MOLECULAR-BEAM EPITAXY

Selective growth of ZnSe and ZnS on (001) GaAs substrates patterned wi th a carbonaceous mask was examined by metalorganic molecular-beam epi taxy. The minimum growth temperature to achieve selective growth of Zn Se was 400 degrees C, while that for ZnS was the lower temperature of 300 degrees C. These growth temperatures for selective growth are much lower than those reported up to now. The carbonaceous masks were depo sited by electron-beam irradiation, and the deposition processes will be discussed in some detail. Submicron resolution with this low-temper ature selective growth will be demonstrated.