GROWTH OF GAN ON INDIUM TIN OXIDE GLASS SUBSTRATES BY RF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION METHOD

The GaN thin films were grown at a low substrate temperature (500 degr ees C) by radio-frequency (13.56 MHz) plasma enhanced chemical vapor d eposition (RF PECVD) on glass substrates deposited with indium tin oxi de (ITO) thin films. The growth of a thin buffer layer at 200 degrees C improved the sample quality. Highly oriented polycrystalline GaN, wh ere the (0002) planes were parallel to the substrate surface, was iden tified by X-ray diffraction (XRD) measurement. The surface orientation was strongly dependent on the growth parameters. Surface morphology o bserved by atomic force microscopy (AFM) showed the hexagonal columnar structure of the GaN thin films.