INELASTIC ELECTRON-TUNNELING INTO P-BI2TE3 CRYSTALS

Citation
J. Nagao et al., INELASTIC ELECTRON-TUNNELING INTO P-BI2TE3 CRYSTALS, Journal of applied physics, 83(9), 1998, pp. 4807-4809
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
83
Issue
9
Year of publication
1998
Pages
4807 - 4809
Database
ISI
SICI code
0021-8979(1998)83:9<4807:IEIPC>2.0.ZU;2-#
Abstract
Inelastic electron tunneling experiments have been performed in p-Bi2T e3-Al oxide-Al junctions. Strong peaks due to electron-acoustic phonon coupling are observed in the second derivative tunnel spectrum. These phonon structures are closely related to the effective Debye temperat ure. This gives direct evidence that the electron-acoustic phonon scat tering plays a dominant role in p-Bi2Te3. (C) 1998 American Institute of Physics.