THE PROTRUSION OF LIQUID-PHASE OXIDE DEPOSITION ON PATTERNED SILICON-WAFER WITH SILICON-NITRIDE AS MASK

In recent integrated circuit (IC) process development, planarization i s an essential requirement. The low temperature growth, good step cove rage and selective growth make the liquid phase deposition (LPD)-SiO2 have several applications in IC fabrications, such as completely plana rized multilevel interconnections and trench isolation, etc. In the ca se of the selective growth of LPD-SiO2, there are spherical protrusion s at the corners of silicon nitride mask. We propose a model to explai n it and therefore control the planarized selective growth of LPD-SiO2 .