EFFECT OF SPACER LAYER THICKNESS ON ENERGY-LEVEL WIDTH NARROWING IN GAINAS INP RESONANT-TUNNELING DIODES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY/

We studied the effect of spacer layer thickness on the resonant level width in resonant tunneling diodes (RTDs). GaInAs/InP RTDs were fabric ated with various spacer layer thicknesses using organo-metallic vapor phase epitaxy; and the resonant level width was estimated. As a resul t, the resonant level width was found to decrease with increasing spac er layer thickness. To discuss this tendency, a theoretical model of t he interface fluctuation between spacer layers and electrodes, caused by the random distribution of the impurity ions in electrodes, was pro posed.