REDISTRIBUTION PROCESS OF OXYGEN-ATOMS IN SEPARATION-BY-IMPLANTED-OXYGEN (SIMOX) SUBSTRATES

To form separation-by-implanted-oxygen (SIMOX) substrates, oxygen ions were implanted into the conventional (100) single-crystal silicon sub strates at 80keV to a dose of 1.0 x 10(18) cm(-2), maintaining the sub strate temperature at around 520 degrees C. Before and after post impl antation annealing at 650-1280 degrees C for 2 h, we examined silicon- on-insulator (SOI) structures of the SIMOX substrates using X-ray phot oelectron spectroscopy (XPS), Fourier transform infrared absorption sp ectroscopy (FTIR), cross-sectional transmission electron microscopy (X TEM), and Rutherford backscattering spectroscopy (RBS). On the basis o f the experimental results of the XPS measurements (depth profiles of oxygen concentration and Si:, spectrum at around the binding energy of 99-105 eV) and the FTIR measurements (the peak position and the full width at half-maximum of the absorption peak associated with the Si-O stretching mode at around 1080 cm(-1)), together with XTEM images and RES spectra, we clarified that inward migration of the implanted oxyge n atoms is one of the primary processes for the formation of the SOI s tructure, and discussed the redistribution process of the implanted ox ygen atoms as a function of the annealing temperature.