On Si(001) surfaces annealed at 700 degrees C after the deposition of
1.5 monolayer (ML) or Ba at room temperature, facet spots were observe
d in addition to the 2 x 1 pattern of the Si(001) clean surface. These
patterns were recorded using a TV camera and stored in a personal com
puter as an image. Line profiles were obtained on the line along which
the facet spot moved. From these profiles the peak position of facet
spots was extracted and superposed on a reciprocal lattice space to co
nstruct reciprocal lattice rods. From the angle of these rods to those
of the Si(001) substrate, the facet is indicated to be a metal-induce
d Si(113) face.