NEW METHOD TO INCREASE SOLID PRECURSOR VAPORIZATION FOR METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Citation
Y. Tasaki et al., NEW METHOD TO INCREASE SOLID PRECURSOR VAPORIZATION FOR METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 37(2), 1998, pp. 649-652
Citations number
6
Categorie Soggetti
Physics, Applied
Volume
37
Issue
2
Year of publication
1998
Pages
649 - 652
Database
ISI
SICI code
Abstract
A method for obtaining the saturated vapor of conventional alkaline-ea rth DPM (dipivaloylmethanato) complexes was investigated. The saturate d vapor of a barium precursor was obtained using a eutectic mixture of bis[dipivaloylmethanato]barium (Ba(DPM)(2)) and bis[2,2,6,6-tetrameth yl-3,5-octanedionato]barium (Ba(TMOD)(2)) as a precursor because the e utectic point of the mixture was below 200 degrees C, where vaporizati on in the liquid state was possible. During the preparation of a thin film of barium oxide using Ba(DPM)(2) and Ba(TMOD)(2), mixed in the ra tio of 4 to 1, as a mixed precursor at 200 degrees C, the deposition r ate as three times higher than compared to that obtained using Ba(DPM) 2 singly as a precursor.