Y. Tasaki et al., NEW METHOD TO INCREASE SOLID PRECURSOR VAPORIZATION FOR METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 37(2), 1998, pp. 649-652
A method for obtaining the saturated vapor of conventional alkaline-ea
rth DPM (dipivaloylmethanato) complexes was investigated. The saturate
d vapor of a barium precursor was obtained using a eutectic mixture of
bis[dipivaloylmethanato]barium (Ba(DPM)(2)) and bis[2,2,6,6-tetrameth
yl-3,5-octanedionato]barium (Ba(TMOD)(2)) as a precursor because the e
utectic point of the mixture was below 200 degrees C, where vaporizati
on in the liquid state was possible. During the preparation of a thin
film of barium oxide using Ba(DPM)(2) and Ba(TMOD)(2), mixed in the ra
tio of 4 to 1, as a mixed precursor at 200 degrees C, the deposition r
ate as three times higher than compared to that obtained using Ba(DPM)
2 singly as a precursor.