METAL ALLOY CHARACTERISTICS IN RAPID THERMAL-PROCESS SYSTEM USING A TUNGSTEN HALOGEN LAMP

A rapid thermal processing (RTP) system operated below 500 degrees C h as been designed and constructed. It uses an optical pyrometer for mea suring wafer temperature, in the sensing range from 2.0 mu m to 2.4 mu m. To remove the interference effect of IR emitted from lamps, an IR filter which uses water is adopted. The electrical characteristics of an alloy after RTP are superior to those of an alloy processed in a co nventional furnace, from in the viewpoint of junction spiking, contact resistance and pn diode characteristics. The optimal RTP conditions f or aluminium alloy is 425 degrees C for 10s. The reverse leakage curre nt (at V = 5 V) after RTP decreases from 44.9 nA/cm(2) to 29.3 nA/cm(2 ) in the p(+)n diode. Also, in the n(+)p diode, the leakage current de creases from 122 pA/cm(2) to 85.3 pA/cm(2).