EFFECTIVE CHANNEL-LENGTH AND SOURCE-DRAIN SERIES-RESISTANCE DETERMINATION AFTER ELECTRICAL GATE LENGTH VERIFICATION OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

A new technique of determining the effective channel length by directl y measuring source-drain series resistance of metaloxide-semiconductor field-effect transistors (MOSFETs) was proposed. By using MOSFETs wit h scaled gate lengths, the source-drain series resistance can be obtai ned from a device whose source and drain regions are connected. In ord er to determine whether a MOSFET's source and drain are connected, a ' difference of total resistance' (DTR) method, which can also be used t o electrically determine the gate length of a normal MOSFET after the fabrication process, was developed in this study. The effective channe l length can then be extracted from the obtained series resistance and I-V of MOSFETs. This technique, although it requires very short-gate- length devices, is not affected by source-drain series-resistance gate bias dependence issue encountered in conventional I-V methods.