RAPID-THERMAL-PROCESSED BATIO3 THIN-FILMS DEPOSITED BY LIQUID-SOURCE MISTED CHEMICAL-DEPOSITION

BaTiO3 thin Alms deposited on the RuO2(250 nm)/Ru(20 nm)/TiN(200 nm)/T i(20 nm)/(100)Si substrates by liquid-source misted chemical depositio n are reported. The rapid thermal processing (RTP) technique was used for post deposition annealing. It was found that the strain was releas ed and grain size increased for BaTiO3 films treated at high RTP tempe rature or for long RTP time. The interface between BaTiO3 and the bott om electrode was still sharp for the RTP-treated sample at 950 degrees C. The leakage current density decreases as the RTP temperature incre ases. It can be decreased to 2.09 nA/cm(2) under a supply voltage of 1 .5 V. The dielectric constant can be increased up to 250 measured at 1 00 kHz for the sample treated by RTP at 950 degrees C. The improvement s in the BaTiO3 characteristics are due to the fact that RTP can enhan ce the crystallinity, relax the strain, alleviate the impurities in th e films and does not result in significant interdiffusion of the mater ials.