INTERFACIAL REACTION OF SRRUO3 PREPARED DIRECTLY ON TIN

The interfacial reaction of a SrRuO3 (SRO)/TiN layered film was evalua ted using resistivity measurements and X-ray diffraction. When the SRO film was deposited on TiN at temperatures below 500 degrees C, the Ti N film was not entirely oxidized and the resistivity of both TiN and S RO remained low irrespective of the oxygen pressure during SRO growth. The resistance between SRO and TiN increased when SRO was deposited o n TiN in a vacuum, but it did not increase significantly when SRO was deposited in a vacuum during the initial stage of growth and subsequen tly in 100 mTorr of O-2. This is attributed to insufficient SRO oxidat ion at the interface as a result of oxygen diffusion into the TIN film when SRO is deposited in vacuum.