CORRELATION-EFFECTS IN THE COMPTON PROFILE OF SILICON

Citation
B. Kralik et al., CORRELATION-EFFECTS IN THE COMPTON PROFILE OF SILICON, Physical review letters, 80(19), 1998, pp. 4253-4256
Citations number
36
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
80
Issue
19
Year of publication
1998
Pages
4253 - 4256
Database
ISI
SICI code
0031-9007(1998)80:19<4253:CITCPO>2.0.ZU;2-K
Abstract
Ab initio nonlocal pseudopotential variational quantum Monte Carlo tec hniques are used to compute the correlation effects on the valence mom entum density and Compton profile of silicon. Our results for this cas e are in excellent agreement with the Lam-Platzman correction computed within the local density approximation. Within the approximations use d, we rule out valence electron correlations as the dominant source of discrepancies between calculated and measured Compton profiles of sil icon.