DYNAMICS OF HYDROGEN ADSORPTION ON GAAS ELECTRODES

Citation
Bh. Erne et al., DYNAMICS OF HYDROGEN ADSORPTION ON GAAS ELECTRODES, Physical review letters, 80(19), 1998, pp. 4337-4340
Citations number
20
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
80
Issue
19
Year of publication
1998
Pages
4337 - 4340
Database
ISI
SICI code
0031-9007(1998)80:19<4337:DOHAOG>2.0.ZU;2-8
Abstract
In situ infrared spectroscopy unravels the dynamics of hydrogen adsorp tion on GaAs(100) electrodes. Hydrogen cathodically adsorbs at arsenic sites only and replaces As-OH groups present in the anodic range, cau sing change in the surface dipole potential. The absolute submonolayer coverages depend on potential and result from a competition between c athodic hydrogenation and anodic or chemical hydroxylation. Surface As -H is identified as the intermediate in hydrogen gas evolution. Its el ectrochemical reduction is the rate-limiting step of the reaction.