In situ infrared spectroscopy unravels the dynamics of hydrogen adsorp
tion on GaAs(100) electrodes. Hydrogen cathodically adsorbs at arsenic
sites only and replaces As-OH groups present in the anodic range, cau
sing change in the surface dipole potential. The absolute submonolayer
coverages depend on potential and result from a competition between c
athodic hydrogenation and anodic or chemical hydroxylation. Surface As
-H is identified as the intermediate in hydrogen gas evolution. Its el
ectrochemical reduction is the rate-limiting step of the reaction.