High-efficiency single crystalline silicon solar cells were technicall
y developed as an indispensable element to develop a high-efficiency p
hotovoltaic system in the future. Two technical elements to raise the
efficiency of the cells were adopted: Backside partial heterojunction
fabricated through the deposition of a mu c-Si:H film on a thermal oxi
de with partially etched micro-windows; low-temperature diffusion of p
hosphorus in fabricating an n(+)p junction. These elements were reveal
ed to improve the collection of minority carriers at the back side and
the front side, respectively. Through these developments, a high effi
ciency of 23.5% was obtained for a 5 X 5 cm(2) cell.