DEVICE SIMULATION OF HIGH-EFFICIENCY CRYS TALLINE SILICON SOLAR-CELL

Using numerical simulation techniques, the passivation effect of a sil icon dioxide film under the back surface of a crystalline silicon sola r cell was studied and the effect in a practical cell was evaluated. T he calculation result showed that the oxide passivation technique enha nces cell performance well when the surface recombination velocity on the rear surface of the p-type substrate under the silicon dioxide pas sivation film is below 10(2)cm/s. The recombination velocity on the re ar surface of the high conversion efficiency single crystalline silico n solar cell was evaluated at a low value of 10(2)cm/s. Since the calc ulation parameters can cooperate with the characteristics of the pract ical device, this numerical simulation is a very effective tool to eva luate the practical device parameters.