FILM GROWTH OF HIGH DEPOSITION-RATE, HIGH -QUALITY A-SI-H BY SHORT-PULSE VHF PLASMA CVD METHOD

Citation
K. Nomoto et al., FILM GROWTH OF HIGH DEPOSITION-RATE, HIGH -QUALITY A-SI-H BY SHORT-PULSE VHF PLASMA CVD METHOD, Sharp giho, (70), 1998, pp. 28-31
Citations number
13
Categorie Soggetti
Instument & Instrumentation","Engineering, Eletrical & Electronic","Computer Science Hardware & Architecture
Journal title
ISSN journal
02850362
Issue
70
Year of publication
1998
Pages
28 - 31
Database
ISI
SICI code
0285-0362(1998):70<28:FGOHDH>2.0.ZU;2-N
Abstract
Intensive development of thin film solar cells, as well as the bulk cr ystalline Si solar cells, is proceeding to meet the rapidly growing de mand of solar photovoltaic cells. While amorphous Si type solar cells are considered to be the most promising among thin film solar cells, t he market requires even higher performance and more cost-competitivene ss. The most important issue is to establish a film growth technology for a-Si:H of high deposition rate and high quality. This article desc ribes a novel a-Si:H growth technology called Short-pulse VHF plasma C VD method (S-VHF p-CVD) which we have developed.