EFFECTS OF BORON, CARBON, AND IRON CONTENT ON THE STACKING-FAULT FORMATION DURING SYNTHESIS OF BETA-SIC PARTICLES IN THE SYSTEM SIO2-C-H-2

Through the systematic addition of B, C, and Fe, additive effects on t he stacking fault formation and the morphology of the particles formed during reaction synthesis of beta-SIC were investigated in the presen t study, The whisker content of the synthesized product and the format ion mechanism of whiskers were closely related to the stacking fault d ensity, The addition of B inhibited whisker formation probably because of isotropic imperfection and the suppression of surface diffusion. I ncrease in the reduction force by using an active carbon source and al so adding excess carbon led to an increase in stacking fault density t hrough enhanced whisker formation. In the presence of Fe, the synthesi zed beta-SiC whiskers appeared to possess only a small amount of stack ing faults. The growth mechanism was different with Fe; i.e., isotropi c growth occurred via a dissolution-precipitation reaction through a l iquid phase in the Fe-Si system.