PHASE-RELATIONSHIPS AND PHYSICAL-PROPERTIES OF HOMOLOGOUS COMPOUNDS IN THE ZINC OXIDE-INDIUM OXIDE SYSTEM

Equilibrium phase relationships in the ZnO-In2O3 system were determine d between 1100 degrees and 1400 degrees C using solid-state reaction t echniques and X-ray diffractometry, In addition to ZnO and In2O3, nine homologous compounds, ZnkIn2Ok+3 (where k = 3, 4, 5, 6, 7, 9, 11, 13, and 15), were observed. Electrical conductivity and diffuse reflectan ce of the k = 3, 4, 5, 7 and 11 members were measured before and after annealing at 400 degrees C for 1 h under forming gas (4% H-2-96% N-2) , Room-temperature conductivity increased as k decreased, because of i ncreased carrier concentration as well as increased mobility. In gener al, transparency in the wavelength range of 450-900 nm increased as k increased. Reduction in forming gas resulted in increased conductivity and reduced transparency for all compounds measured. The highest room -temperature conductivity measured, 270 S/cm, was that of reduced Zn3I n2O6.