PHOTOREFLECTANCE CHARACTERIZATION OF AR+ ION ETCHED AND SICL4 REACTIVE ION ETCHED SILICON(100)

Etching with Ar+ ions and SiCl4 reactive ion etching (RIE) of p type 2 -3 Omega cm resistivity Si (100) substrates was characterised using ph otoreflectance (PR), Rutherford backscattering spectrometry, and spect roscopic ellipsometry. Isochronal (5 min) etching was performed at var ious de etch biases (0-500 V). ii distinct modification to the Lambda( 3)-Lambda(1) Si transition of the room temperature PR spectra was obse rved as a function of etch bias for both etching modes. It was found t hat the PR response is sensitive to both the degree and nature of the ion bombardment. (C) 1997 The Institute of Materials.