DEEP TRAP CHARACTERIZATION AND CONDUCTION-BAND OFFSET DETERMINATION OF AL0.48IN0.52AS (GA0.7AL0.3)(0.48)IN0.52AS HETEROSTRUCTURES/

The AlGalnAs quaternary alloy represents an alternative to GalnAs as t he channel material of heterojunction field effect transistors leading to a reduced impact ionisation effect. The conduction hand offset of the AlInAs/GaAInAs heterointerface is experimentally determined by cur rent transport investigation on Schottky diodes. The simulation of the forward current shows that the thermionic field emission call become the dominant conduction mechanism in these heterostructures when the t hickness of the AlInAs barrier is decreased. One main electron trap is observed by deep level transient spectroscopy in the GaAlInAs layer, which probably has the source origin as the dominant defect E3 in AlIn As. (C) 1997 The Institute of Materials.