GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GAN WITH HYDRAZINE ON SPINEL SUBSTRATES

Growth of high quality wurtzite-structure GaN layers on (111) MgAl2O4 by gas source molecular beam epitaxy is described. Hydrazine was used as a source of active nitrogen. In situ reflection high energy electro n diffraction was used to monitor the growth mode. Two-dimensional gro wth was obtained at temperatures above 750 degrees C on multi-step GaN buffer layers. The resulting GaN films show excellent luminescence pr operties. (C) 1998 American Institute of Physics. [S0003-6951(98)01419 -3].