THE INFLUENCE OF CAVITIES AND POINT-DEFECTS ON BORON-DIFFUSION IN SILICON

Cavities, formed in Si by hydrogen implantation and subsequent anneali ng, can provide strong sinks for metal interstitials and are ideal get tering sites for metal impurities. This letter reports the effect of c avities on the transient enhanced diffusion (TED) of boron. Boron impl antation was carried out into wafers containing pre-formed cavities an d TED of boron was suppressed during subsequent annealing, In some cas es, the boron was introduced into an amorphous layer and the presence of cavities was also observed to reduce the amount of the transient en hanced diffusion occurring, (C) 1998 American Institute of Physics. [S 0003-6951(98)03419-6].