C. Glebeler et al., SPACE-CHARGE-LIMITED CHARGE INJECTION FROM INDIUM TIN OXIDE INTO A STARBURST AMINE AND ITS IMPLICATIONS FOR ORGANIC LIGHT-EMITTING-DIODES, Applied physics letters, 72(19), 1998, pp. 2448-2450
We have investigated the hole-injection characteristics from indium ti
n-oxide (ITO) 4,4',4 s{N,-(3-methylphenyl)-N-phenylamino}triphenylamin
e (m-MTDATA) and have measured the hole-carrier drift mobility of this
compound in single-layer ITO/m-MTDATA/Au structures. We have found th
at ITO is able to provide trap-free space-charge-limited currents over
a wide range of film thicknesses and have established unambiguously t
hat the ITO/m-MTDATA is an ideal Ohmic contact at high electric fields
. Our observations clarify the role of m-MTDATA as a voltage-lowering
hole-injecting buffer layer in organic light-emitting diodes. (C) 1998
American Institute of Physics. [S0003-6951(98)02719-3].