QUANTUM-DOT HETEROSTRUCTURES - FABRICATION, PROPERTIES, LASERS (REVIEW)

Citation
Nn. Ledentsov et al., QUANTUM-DOT HETEROSTRUCTURES - FABRICATION, PROPERTIES, LASERS (REVIEW), Semiconductors, 32(4), 1998, pp. 343-365
Citations number
130
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
32
Issue
4
Year of publication
1998
Pages
343 - 365
Database
ISI
SICI code
1063-7826(1998)32:4<343:QH-FPL>2.0.ZU;2-1
Abstract
In the present review we summarize original results where 1) we have e xperimentally discovered a novel class of spontaneously ordered nanost ructures, namely equilibrium arrays of three-dimensional, coherently s trained islands on crystal surfaces; 2) we have developed a theory of spontaneous formation of semiconductor nanostructures in heteroepitaxi al systems; 3) we have experimentally demonstrated the existence of a novel class of semiconductor heterostructures, namely perfect quantum dots having an atom-like energy spectrum; we have performed a detailed investigation of the optical properties of quantum dots; 4) we have f abricated quantum dot-based injection lasers demonstrating unique char actristics, namely high-temperature stability of the threshold current and ultra-high material gain. (C) 1998 American Institute of Physics.