EFFECT OF NONUNIFORM DISTRIBUTION OF RADIATION DEFECTS IN GAAS ON THEDLTS SPECTRA

An attempt has been made to relate the origin of the U band in the DLT S spectrum of neutron-irradiated GaAs with the known P2 and P3 defects localized near disordered regions. The shape and temperature position of the P2 and P3 peaks in the DLTS spectra are assumed to vary as a r esult of the influence of the electric field of these disordered regio ns on the rate of electron emission from the defect levels. The DLTS s pectra for P2 and P3 centers located in regions with internal electric fields have been calculated. A comparison of the total calculated spe ctrum for P2 and P3 centers with a U band reveals satisfactory agreeme nt with experiment. (C) 1998 American Institute of Physics.