ON TRAPPING OF MINORITY CURRENT CARRIERS IN N-TYPE CDXHG1-XTE AT LOW-TEMPERATURES

Authors
GASANZADE SG SHEPELSKII GA
Citation
Sg. Gasanzade et Ga. Shepelskii, ON TRAPPING OF MINORITY CURRENT CARRIERS IN N-TYPE CDXHG1-XTE AT LOW-TEMPERATURES, Semiconductors, 32(4), 1998, pp. 389-391
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
32
Issue
4
Year of publication
1998
Pages
389 - 391
Database
ISI
SICI code
1063-7826(1998)32:4<389:OTOMCC>2.0.ZU;2-H
Abstract
The photoconductivity and photoelectromagnetic effect was measured und er conditions of uniaxial elastic deformation in n-type CdxHg1-xTe cry stals. The increase in the current-carrier lifetime in the low-tempera ture range (T<40-50 K) is shown to be due to trapping of minority curr ent carriers (holes) in shallow acceptor-type attachment levels rather than interband Auger recombination. (C) 1998 American Institute of Ph ysics.