PHOTOSENSITIVITY OF THIN-FILM STRUCTURES BASED ON LASER-DEPOSITED CUIN(TEXSE1-X)(2) LAYERS

Citation
Iv. Bodnar et al., PHOTOSENSITIVITY OF THIN-FILM STRUCTURES BASED ON LASER-DEPOSITED CUIN(TEXSE1-X)(2) LAYERS, Semiconductors, 32(4), 1998, pp. 409-411
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
32
Issue
4
Year of publication
1998
Pages
409 - 411
Database
ISI
SICI code
1063-7826(1998)32:4<409:POTSBO>2.0.ZU;2-X
Abstract
Thin films of the solid solutions CuIn(TexSe1-x)(2) (0<x<1) exhibiting chalcopyrite structure were obtained by the method of laser depositio n. Using half-transmitting indium layers, Schottky diodes were prepare d on the basis of the films obtained. The spectral dependence of the s ensitivity as a function of the ratio between Te and Se was investigat ed by illuminating the structures through the In contact. Analysis of the experimental results showed that the region of spectral sensitivit y of such thin-film structures depends on the tellurium content in the CuIn(TexSe1-x)(2) layers. (C) 1998 American Institute of Physics.