RAMAN SPECTROMETER FOR IN-SITU DIAGNOSTICS OF MATERIALS IN GAS-DISCHARGE PLASMA

A Raman spectrometer for the in situ diagnostics of materials deposite d in a gas discharge plasma is described. The device operates under th e conditions of intense spurious emission from the discharge region an d heat radiation from a substrate. The spectrometer represents a PC-co ntrolled data acquisition system based on a commercial double-beam gra ting monochromator MDR-1 and equipped with a pulsed Cu-vapor laser and a lock-in detector. The Raman spectrometer was used to study the grow th and modification of polycrystalline diamond films under de discharg e conditions. It is demonstrated that the in situ Raman spectroscopic analysis using the proposed device can be used for determining the pha se composition acid thickness of deposited carbon films, measuring the ir temperature and internal stresses, and studying variations of these characteristics during the film growth.